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1/13 july 2004 STQ2NK60ZR-AP stp2nk60z - std2nk60z-1 n-channel 600v - 7.2 ? - 1.4a to-220/to-92/ipak zener-protected supermesh? mosfet table 1: general features typical r ds (on) = 7.2 ? extremely high dv/dt capability esd improved capability 100% avalanche tested new high voltage benchmark gate charge minimized description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mos- fets including revolutionary mdmesh? products. applications low power battery chargers swith mode low power supplies(smps) low power, ballast, cfl (compact fluorescent lamps) table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw STQ2NK60ZR-AP stp2nk60z std2nk60z-1 600 v 600 v 600 v < 8 ? < 8 ? < 8 ? 0.4 a 1.4 a 1.4 a 3 w 45 w 45 w 1 2 3 3 2 1 to-92 (ammopack) to-220 ipak sales type marking package packaging STQ2NK60ZR-AP q2nk60zr to-92 ammopak stp2nk60z p2nk60z to-220 tube std2nk60z-1 d2nk60z ipak tube rev. 3
STQ2NK60ZR-AP - stp2nk60z - std2nk60z-1 2/13 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 1.4a, di/dt 200a/s, v dd v (br)dss , t j t jmax. table 4: thermal data table 5: avalanche characteristics table 6: gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device ? s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ? s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit to-220 / ipak to-92 v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k ? ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 1.4 0.4 a i d drain current (continuous) at t c = 100 c 0.77 0.25 a i dm ( ) drain current (pulsed) 5.6 1.6 a p tot total dissipation at t c = 25 c 45 3 w derating factor 0.36 0.025 w/ c v esd(g-s) gate source esd (hbm-c= 100pf, r=1.5k ? ) 1500 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c to-220 / ipak to-92 unit rthj-case thermal resistance junction-case max 2.77 -- c/w rthj-amb thermal resistance junction-ambient max 100 120 c/w rthj-lead thermal resistance junction-lead max -- 40 c/w t l maximum lead temperature for soldering purpose 300 260 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 1.4 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 90 mj symbol parameter test conditions min. typ. max. unit bv gso gate source breakdown voltage i gs = 1 ma (open drain) 30 v
3/13 STQ2NK60ZR-AP - stp2nk60z - std2nk60z-1 electrical characteristics (t case =25 c unless otherwise specified) table 7: on/off table 8: dynamic table 9: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. (3) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as coss when vds increases from 0 to 80% vdss symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 33.754.5v r ds(on) static drain-source on resistance v gs = 10v, i d = 0.7 a 7.2 8 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 0.7 a 1 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 170 27 5 pf pf pf c oss eq. (3) equivalent output capacitance v gs = 0v, v ds = 0v to 480v 30 pf t d(on) t r t d(off) t r turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 0.65 a, r g = 4.7 ?, v gs = 10 v (resistive load see, figure 21) 8 30 22 55 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480v, i d = 1.5 a, v gs = 10v (see, figure 24) 7.7 1.7 4 10 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 1.5 6 a a v sd (1) forward on voltage i sd = 1.5 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.3 a, di/dt = 100 a/s v dd = 25v, t j = 25 c (see test circuit, figure 22) 250 550 4.4 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.3 a, di/dt = 100 a/s v dd = 25v, t j = 150 c (see test circuit, figure 22) 300 690 4.6 ns c a
STQ2NK60ZR-AP - stp2nk60z - std2nk60z-1 4/13 figure 3: . safe operating area for to-220 figure 4: safe operating area for ipak figure 5: safe operating area for to-92 figure 6: thermal impedance for to-220 figure 7: thermal impedance for ipak figure 8: thermal impedance for to-92
5/13 STQ2NK60ZR-AP - stp2nk60z - std2nk60z-1 figure 9: output characteristics figure 10: transconductance figure 11: gate charge vs gate-source voltage figure 12: transfer characteristics figure 13: static drain-source on resistance figure 14: capacitance variations
STQ2NK60ZR-AP - stp2nk60z - std2nk60z-1 6/13 figure 15: normalized gate thereshold volt- age vs temperature figure 16: source-drain forward characteris- tics figure 17: maximum avalanche energy vs temperature figure 18: normalized on resistance vs tem- perature figure 19: normalized bv dss vs temperature
7/13 STQ2NK60ZR-AP - stp2nk60z - std2nk60z-1 figure 20: unclamped inductive load test cir- cuit figure 21: switching times test circuit for resistive load figure 22: test circuit for inductive load switching and diode recovery times figure 23: unclamped inductive wafeform figure 24: gate charge test circuit
STQ2NK60ZR-AP - stp2nk60z - std2nk60z-1 8/13 dim. mm. inch min. typ max. min. typ. max. a 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 d 4.45 4.95 0.175 0.194 e 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 l 12.70 15.49 0.50 0.610 r 2.16 2.41 0.085 0.094 s1 0.92 1.52 0.036 0.060 w 0.41 0.56 0.016 0.022 v5 5 to-92 mechanical data
9/13 STQ2NK60ZR-AP - stp2nk60z - std2nk60z-1 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
STQ2NK60ZR-AP - stp2nk60z - std2nk60z-1 10/13 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
11/13 STQ2NK60ZR-AP - stp2nk60z - std2nk60z-1 dim. mm. inch min. typ max. min. typ. max. a1 4.45 4.95 0.170 0.194 t 3.30 3.94 0.130 0.155 t1 1.6 0.06 t2 2.3 0.09 d 0.41 0.56 0.016 0.022 p0 12.5 12.7 12.9 0.49 0.5 0.51 p2 5.65 6.35 7.05 0.22 0.25 0.27 f1, f2 2.44 2.54 2.94 0.09 0.1 0.11 delta h -2 2 -0.08 0.08 w 17.5 18 19 0.69 0.71 0.74 w0 5.7 6 6.3 0.22 0.23 0.24 w1 8.5 9 9.25 0.33 0.35 0.36 w2 0.5 0.02 h 18.5 20.5 0.72 0.80 h0 15.5 16 16.5 0.61 0.63 0.65 h1 25 0.98 d0 3.8 4 4.2 0.15 0.157 0.16 t 0.9 0.035 l110.43 l1 3 0.11 delta p -1 1 -0.04 0.04 to-92 ammopack
STQ2NK60ZR-AP - stp2nk60z - std2nk60z-1 12/13 table 10: revision history date revision description of changes 07-jul-2004 3 the document change from ? target ? to ? complete ? new stylesheet
13/13 STQ2NK60ZR-AP - stp2nk60z - std2nk60z-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states.

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